| 摘要 |
A plasma process device includes a process vessel (3) having a plasma generating area therein, a susceptor (6) provided in the process vessel for supporting a substrate (W) having a process surface, and a gas inlet means (23) for introducing a process gas into the plasma generating area. A dipole ring magnet (41) is arranged around the outer periphery of the process vessel, for generating a magnetic field having a magnetic line of force in the plasma generating area, so that a plasma of the process gas is generated in the plasma generating area. The dipole ring magnet has a plurality of anisotropic segment magnets arranged on an oval track, which are cylindrical permanent magnets having the same shape and size and magnetized in the diameter direction. <IMAGE>
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