| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that a structure for acquiring high-purity NH3 gas is complex since a gas purifier is added to remove impurities which are caused by the use of a vaporizer. SOLUTION: An ammonia gas supplying device supplies ammonia gas to a reactor of a CVD device for film-forming of a nitride semiconductor. It comprises a storage tank 1 which holds liquid ammonia, a constant temperature device 2 which keeps the storage tank 1 at a normal temperature and vaporizes the liquid ammonia in the storage tank 1, a reactor 6, which is depressurized, of the CVD device, and a guide path 5 which comprises a regulator 10 and connects the storage tank 1 to the reactor 6. The ammonia gas vaporized in the storage tank 1 is supplied to the reactor 6 by adjusting pressure by the regulator 10. COPYRIGHT: (C)2003,JPO
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