SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device improved so as to increase the coverage of a silicon nitride film passivation film. SOLUTION: A top layer inter-layer insulating film 3 is provided above a semiconductor substrate 1. On the top layer inter-layer insulating film 3, top layer wiring 4 is provided. A silicon oxide film 5 is provided so as to cover the upper and side wall of the top layer wiring 4. A nitride film 6 is provided on the top layer inter-layer insulating film 3 so as to cover the top layer wiring 4 through the silicon oxide film 5. A polyimide film 7 is provided on the nitride film 6. The part other than the lower part of the top layer wiring 4 of the top layer inter-layer insulating film 3 is gouged in a lower direction and the nitride film 6 covers the gouged part of the top layer inter-layer insulating film 3. COPYRIGHT: (C)2003,JPO