| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor optical integrated element having a structure in which a leakage current between a light emitting device and a modulation device can be reduced, and to provide a method for manufacturing the same. SOLUTION: The semiconductor optical integrated element 1 comprises a light emitting device 110, a modulation device 120 and a separating part 130 on a substrate 2. A semiconductor laser element is constituted in the device 110, and a modulation element is constituted in the modulation device. The part 130 is formed between the device 110 and the device 120. In the part 130, a semiconductor embedding part 80e is provided in a second clad layer 8m. The clad layer 8m is constituted of a p-type InP, while the part 80e is constituted of an n-type InP. Accordingly, the part 80e has an effect of disturbing a leakage current flowing between electrodes 90a and 90b. Therefore, a leakage current generated via the second clad layer 8m is reduced between the electrodes 90a and 90b. COPYRIGHT: (C)2003,JPO
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