摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which assures higher dielectric breakdown strength for surge current without increase of chip area. SOLUTION: The semiconductor device including a surge protection circuit 1 is further provided with a pad 3 connected to the surge protection circuit 1 and pads 2, 4 not connected to the surge protection circuit. The connected pad 3 and non-connected pads 2, 4 are connected via the wirings 5, 6 of a re-wiring layer 10. COPYRIGHT: (C)2003,JPO
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