发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device which assures higher dielectric breakdown strength for surge current without increase of chip area. SOLUTION: The semiconductor device including a surge protection circuit 1 is further provided with a pad 3 connected to the surge protection circuit 1 and pads 2, 4 not connected to the surge protection circuit. The connected pad 3 and non-connected pads 2, 4 are connected via the wirings 5, 6 of a re-wiring layer 10. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003229428(A) 申请公布日期 2003.08.15
申请号 JP20020027038 申请日期 2002.02.04
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 ISEDA YASUNAGA;OKADA YASUYUKI;NAMISA AKINORI
分类号 H01L23/52;H01L21/3205;H01L21/822;H01L27/04;(IPC1-7):H01L21/320 主分类号 H01L23/52
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