MANUFACTURING METHOD FOR SUPERJUNCTION SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To fill a trench by epitaxial growth so as not to leave a void and to eliminate the void in the case that the void remains in manufacturing a semiconductor element having a superjunction structure.

SOLUTION: By inclining a trench side wall, and performing the epitaxial growth using a dichlorosilane as a gaseous raw material at the temperature ≥800°C and ≤1000°C and also by the pressure ≥1333.22 Pa and ≤13332.2 Pa, the trench is filled with an epitaxial layer 2 so as not to leave the void inside the epitaxial layer 2. Also, even in the case that the trench can not be fully filled by the epitaxial growth, the void inside the trench is eliminated by performing hydrogen reduction atmosphere annealing at the temperature above 900°C after the epitaxial growth.

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