POWER CONVERSION APPARATUS AND GaN-BASED SEMICONDUCTOR DEVICE USED FOR THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a power conversion apparatus with high reliability and high efficiency guaranteeing a stable operation and a GaN-based semiconductor device as a component used for realizing it. SOLUTION: A GaN-based Schottky diode 20 as a protective element is connected between the source and drain of a power FET 10 being a switching element. In the GaN-based Schottky diode 20, an undoped AlGaN layer 24 is formed on an undoped GaN layer 23. Adjacently to the AlGaN layer 24, an n-type GaN layer 26 is formed on the GaN layer 23. A two-dimensional electron gas is generated near the heterojunction boundary of the GaN layer 23 and the AlGaN layer 24. A cathode electrode 27 is formed in ohmic contact on the n-type GaN layer 26 and an anode electrode 28 is formed in Schottky contact on the AlGaN layer 24. COPYRIGHT: (C)2003,JPO