发明名称 METHOD AND DEVICE FOR DEVELOPMENT
摘要 PROBLEM TO BE SOLVED: To provide a method and device for development capable of preventing the occurrence of development defects of a substrate or defects in a line thickness, form, etc. SOLUTION: A development device 20 develops the treated surface S of a wafer W. It comprises a first rotating/holding means 122 which rotatably holds a base 61 for film forming that is formed on the upper surface of a development liquid film A, a second rotating/holding means 129 which rotatably holds the wafer W by pointing the treated surface S to the development liquid film A, and a drive means 130 which raises/lowers/tilts the second rotating/ holding means 129 to make the wafer W contact the development liquid film A. The drive means 130 raises/lowers the wafer W held by the rotating/holding means 129 while tilting it around a virtual horizontal axis. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003229357(A) 申请公布日期 2003.08.15
申请号 JP20020326340 申请日期 2002.11.11
申请人 TOKYO ELECTRON LTD 发明人 KITAMURA TETSUYA
分类号 G03F7/30;H01L21/027;(IPC1-7):H01L21/027 主分类号 G03F7/30
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