| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device having a limiter circuit which can output selectively one-level data from a binary high voltage value utilizing difference between surface breakdown characteristics of a high breakdown strength MOS transistor and a low breakdown strength transistor. <P>SOLUTION: This device is provided with a boosting circuit 12 boosting power source voltage 11 supplied to an IC, and a limiter circuit 13 having a function by which high voltage being an output of the boosting circuit is limited, binary voltage values are selected from the limiter circuit 13 depending on recording/erasing of data or evaluation of data, either of voltage values is outputted to a memory block 14. <P>COPYRIGHT: (C)2003,JPO</p> |
