APPARATUS AND METHOD OF DEPOSITING METAL FILM

摘要

PROBLEM TO BE SOLVED: To increase a film deposition rate by surely increasing a Cu film with respect to a film deposition time. SOLUTION: The film deposition rate is increased by depositing a precursor of a Cu component on a substrate while suppressing relative increase of etching particles by supplying a gaseous starting material containing chlorine as halogen intermittently to a chamber, supplying the gaseous starting material in a state that the plasma particles contributing the film deposition is sufficiently existed and the deposited Cu film is never etched by the etching particles to surely increase the Cu film deposition with respect to the film deposition time. COPYRIGHT: (C)2003,JPO