发明名称 Piezoelektrisk kristallinisk film av zinkoxid och förfarande för dess bildning
摘要 <p>Disclosed herein is a zinc oxide piezoelectric crystal film which is grown on an R-plane sapphire substrate to orient its c-axis in parallel with the substrate surface. In order to improve orientation of the zinc oxide piezoelectric crystal film, a Zn target for forming the zinc oxide piezoelectric crystal film by sputtering contains not more than 5 percent by weight of nickel or not more than 4.5 percent by weight of iron with respect to Zn. <IMAGE></p>
申请公布号 FI111573(B) 申请公布日期 2003.08.15
申请号 FI19940000099 申请日期 1994.01.10
申请人 MURATA MANUFACTURING CO.,,LTD 发明人 KOIKE,JUN;IEKI,HIDEHARU
分类号 C30B29/16;H01L41/18;H03H9/25;(IPC1-7):H01L41/22;H03H9/02 主分类号 C30B29/16
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