发明名称 |
Piezoelektrisk kristallinisk film av zinkoxid och förfarande för dess bildning |
摘要 |
<p>Disclosed herein is a zinc oxide piezoelectric crystal film which is grown on an R-plane sapphire substrate to orient its c-axis in parallel with the substrate surface. In order to improve orientation of the zinc oxide piezoelectric crystal film, a Zn target for forming the zinc oxide piezoelectric crystal film by sputtering contains not more than 5 percent by weight of nickel or not more than 4.5 percent by weight of iron with respect to Zn. <IMAGE></p> |
申请公布号 |
FI111573(B) |
申请公布日期 |
2003.08.15 |
申请号 |
FI19940000099 |
申请日期 |
1994.01.10 |
申请人 |
MURATA MANUFACTURING CO.,,LTD |
发明人 |
KOIKE,JUN;IEKI,HIDEHARU |
分类号 |
C30B29/16;H01L41/18;H03H9/25;(IPC1-7):H01L41/22;H03H9/02 |
主分类号 |
C30B29/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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