| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the problem of a large cell area in the conventional memory cell utilizing a phase change. <P>SOLUTION: A memory cell structure using a vertical selection transistor and its manufacturing method are proposed, thus achieving a memory cell having area smaller than the conventional DRAM, a phase change memory that can reduce power consumption in read and write operation, and further a phase change memory that has stable read operation. <P>COPYRIGHT: (C)2003,JPO |
