发明名称 |
ELECTRON SOURCE DEVICE AND MANUFACTURING METHOD THEREFOR |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a low-cost and long-service-life electron source device having a high electron emission performance, and to provide a manufacturing method for the electron source device. <P>SOLUTION: In this electron source device, one face of an Al substrate is formed with a porous aluminum layer by anodization, and embedded layers of Ni or the like are formed inside nanoholes thereof. A surface of the aluminum layer is formed with a thin film of Au or the like such that the thin film contacts with the Ni embedded layers, and bottom end parts of the nanoholes and the Al substrate are separated by a barrier layer of aluminum. <P>COPYRIGHT: (C)2003,JPO</p> |
申请公布号 |
JP2003229045(A) |
申请公布日期 |
2003.08.15 |
申请号 |
JP20020024046 |
申请日期 |
2002.01.31 |
申请人 |
TOSHIBA CORP;NIHON ANODIZING CO LTD;FUJI SHIKISO KK |
发明人 |
ITO TAKEO;MATSUDA SHUZO;TANAKA HAJIME;SAKASHITA YOSHIHIRO;HASEGAWA TAICHI;SAKAI KAZUO |
分类号 |
H01J9/02;H01J1/30;H01J1/312;(IPC1-7):H01J1/312 |
主分类号 |
H01J9/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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