PRODUCTION METHOD OF CPP STRUCTURE MAGNETORESISTANCE EFFECT DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a production method of a CPP structure magnetoresistance effect device in which the magnetoresistance effect characteristics of a magnetoresistance effect film can be sufficiently secured. SOLUTION: A lower magnetic pole 38 is at least partially exposed on a surface 42 of a base layer. A resist film 61 is formed on the surface 42 of the base layer. The resist film 61 is partitioned with a pattern space 62 forming the contour of the magnetoresistance effect film. Within such a pattern space 62, the magnetoresistance effect film is laminated and formed. Dry etching treatment is not applied to the magnetoresistance effect film at all. The chips of the magneto resistance effect film are not generated. The wall surface of the magnetoresistance effect film is not exposed under sticking of the chips. The wall surface of the magnetoresistance effect film can be kept clean as much as possible. COPYRIGHT: (C)2003,JPO