| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor laser element having a nonresonant light confinement structure in which high reliability is ensured from low output to high output. SOLUTION: On an n-GaAs substrate 1, an n-Al<SB>z1</SB>Ga<SB>1-z1</SB>As lower clad layer 2, an n- or i-In<SB>0.49</SB>Ga<SB>0.51</SB>P lower optical waveguide layer 3, an In<SB>x3</SB>Ga<SB>1-x3</SB>As<SB>1-y3</SB>P<SB>y3</SB>compressive strained quantum well active layer 4, p- or i-In<SB>0.49</SB>Ga<SB>0.51</SB>P upper optical waveguide layer 5 are formed, and a p-In<SB>x4</SB>Ga<SB>1-x4</SB>As<SB>1-y4</SB>P<SB>y4</SB>first etching block layer 6 and an n-In<SB>0.49</SB>Ga<SB>0.51</SB>P upper current constriction layer 7, are formed thereon in the shape of a strip extending in the direction of a resonator while having openings in a current injection region 20 of width dc and in regions of width dc/2 spaced apart by db<SB>1</SB>on the opposite sides of the current injection region 20. On the n-In<SB>0.49</SB>Ga<SB>0.51</SB>P upper current constriction layer 7 and the p-In<SB>0.49</SB>Ga<SB>0.51</SB>P upper optical waveguide layer 5 exposed to the opening, an n-In<SB>x4</SB>Ga<SB>1-x4</SB>As<SB>1-y4</SB>P<SB>y4</SB>second etching block layer 8 and an n-In<SB>0.49</SB>(Al<SB>z2</SB>Ga<SB>1-z2</SB>)<SB>0.51</SB>P current constriction layer 9 are provided, and further provided with a p-In<SB>0.49</SB>(Al<SB>z1</SB>Ga<SB>1-z1</SB>)<SB>0.51</SB>P upper clad layer 10 and a p-GaAs contact layer 11. COPYRIGHT: (C)2003,JPO
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