发明名称 SOLID-STATE IMAGING APPARATUS AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To restrain a dark current and white spots without reducing the dealing amount of electric charges in a vertical electric charge transfer part and without deteriorating sensitivity of a sensor. SOLUTION: In a silicon substrate, impurity concentration of a first channel stop 20a existing in a central part of a channel stop region 20 is made high, and impurity concentration of a second channel stop 20b existing in a peripheral part of the channel stop region 20 is made low. As a result, a dark current and white spots are restrained without reducing the dealing amount of electric charges in the vertical electric charge transfer part 16(L) and without deteriorating sensitivity of the sensor 14. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003229559(A) 申请公布日期 2003.08.15
申请号 JP20020026975 申请日期 2002.02.04
申请人 SONY CORP 发明人 KUROIWA ATSUSHI;KANBE HIDEO
分类号 H01L27/148;(IPC1-7):H01L27/148 主分类号 H01L27/148
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