METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for fabricating a semiconductor device in which the occurrence of crystal defect due to synergistic action of concentration of stress in the vicinity of the STI end of a semiconductor substrate and the occurrence of microdefects caused by ion implantation is suppressed. SOLUTION: At the surface layer part of an Si substrate 1, an STI 3 is formed around an active region 1a. After a gate electrode 4 and a sidewall 5 are formed on the STI 3, a resist mask 6 is formed from a gate electrode 4 to the active region 1a. In this regard, patterning is performed such that the end 6a of the resist mask 6 abutting on a region for forming an N+type diffusion region 2 is located at a position separated by 0.3μm from the STI end 3a, for example. Subsequently, the N+type diffusion region 2 is formed to be spaced apart from the STI end 3a by ion implantation. COPYRIGHT: (C)2003,JPO