发明名称 MgO VAPOR DEPOSITION MATERIAL AND PRODUCTION METHOD THEREFOR
摘要 <P>PROBLEM TO BE SOLVED: To provide an electron beam vapor deposition method in which splashes are hard to occur even on vapor deposition by, and the film properties of an MgO film to be deposited is improved. <P>SOLUTION: The vapor deposition material consists of polycrystals having an MgO purity of &ge;99.0% and a relative density of &ge;90.0%, and having a phosphorus P content of 0.01 to 30 ppm. <P>COPYRIGHT: (C)2003,JPO
申请公布号 JP2003226960(A) 申请公布日期 2003.08.15
申请号 JP20020335652 申请日期 2002.11.19
申请人 MITSUBISHI MATERIALS CORP 发明人 SAKURAI HIDEAKI;TOYOGUCHI GINJIRO;KUROMITSU YOSHIO
分类号 C04B35/053;C23C14/24;H01J9/02;H01J11/22;H01J11/34;H01J11/40 主分类号 C04B35/053
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