发明名称 |
MgO VAPOR DEPOSITION MATERIAL AND PRODUCTION METHOD THEREFOR |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide an electron beam vapor deposition method in which splashes are hard to occur even on vapor deposition by, and the film properties of an MgO film to be deposited is improved. <P>SOLUTION: The vapor deposition material consists of polycrystals having an MgO purity of ≥99.0% and a relative density of ≥90.0%, and having a phosphorus P content of 0.01 to 30 ppm. <P>COPYRIGHT: (C)2003,JPO |
申请公布号 |
JP2003226960(A) |
申请公布日期 |
2003.08.15 |
申请号 |
JP20020335652 |
申请日期 |
2002.11.19 |
申请人 |
MITSUBISHI MATERIALS CORP |
发明人 |
SAKURAI HIDEAKI;TOYOGUCHI GINJIRO;KUROMITSU YOSHIO |
分类号 |
C04B35/053;C23C14/24;H01J9/02;H01J11/22;H01J11/34;H01J11/40 |
主分类号 |
C04B35/053 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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