| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To form a shielding film even on the halftone defect of a photomask implanted with Ga so that the repair of the halftone defect with high accuracy without peeling the shielding film by cleaning and heat is made possible. <P>SOLUTION: A seed layer 6 having high strength of adhesion is formed by electronic beam CVD or FIB-CVD on the halftone defect 3 while a gaseous raw material for the seed layer is passed from a gas gun 4 and the shielding film 7 is formed by FIB-CVD on the formed seed layer 6 while a gaseous raw material for the shielding film of a small halo component is passed from a gas gun 9 onto the formed seed layer 6, by which the halftone defect is repaired. Also, the seed layer 6 having the high strength of adhesion is formed by using the same gaseous raw material as that for the shielding film and changing the scanning method and stagnation time of the ion beam 5, probe current and the gaseous raw material for FIB-CVD and the shielding film 7 of the small halo component is formed by FIB-CVD on the formed seed layer 6. <P>COPYRIGHT: (C)2003,JPO</p> |
