| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, and its production method, in which variation is eliminated in the characteristics of a dielectric element embedded in the semiconductor device. SOLUTION: A dielectric element being formed on a semiconductor substrate comprises a spiral conductive layer and the surface thereof is made smooth by filling recesses in the surface with a material itself shaven off from the surface of the conductive layer. The production method of the semiconductor device comprises a step for forming a conductive layer 27 on the semiconductor substrate 23 through an insulation film 26, a step for making smooth the surface 27a of the conductive layer 27 by filling recesses in the surface with a material 44 itself shaven off from the surface, and a step for forming the dielectric element by patterning the conductive layer 27 spirally. COPYRIGHT: (C)2003,JPO
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