发明名称 |
DISPOSITIF A SEMICONDUCTEUR, PROCEDE DE FABRICATION ET TRANCHE DE SEMICONDUCTEUR |
摘要 |
The invention relates to improvements in a method of manufacturing a semiconductor device in which deterioration in a transistor characteristic is avoided by preventing a channel stop implantation layer from being formed in an active region. After patterning a nitride film (22), the thickness of an SOI layer 3 is measured (S2) and, by using the result of measurement, etching conditions (etching time and the like) for SOI layer 3 are determined (S3). To measure the thickness of SOI layer 3, it is sufficient to use spectroscopic ellipsometry which irradiates the surface of a substance with linearly polarized light and observes elliptically polarized light reflected by the surface of a substance. The etching condition determined is used and a trench TR2 is formed by using patterned nitride film 22 as an etching mask (S4).
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申请公布号 |
FR2835969(A1) |
申请公布日期 |
2003.08.15 |
申请号 |
FR20030001609 |
申请日期 |
2003.02.11 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
MATSUMOTO TAKUJI;IWAMATSU TOSHIAKI;MAEDA SHIGENOBU;HIRANO YUUICHI;MAEGAWA SHIGETO |
分类号 |
H01L21/66;H01L21/336;H01L21/76;H01L21/762;H01L21/8238;H01L21/8244;H01L21/84;H01L27/08;H01L27/092;H01L27/10;H01L27/11;H01L27/12;H01L29/786;(IPC1-7):H01L27/12 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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