| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a technical means for obtaining an active layer having uniform indium composition when an active layer composed of group III nitride semiconductor crystal containing indium which is expressed by a general formula AlQGaRInYN (where 0≤Q<1, 0≤R<1, 0<Y≤1 and Q+R+Y=1) is formed on a boron phosphide based semiconductor crystal layer. <P>SOLUTION: An intermediate layer composed of III-V compound semiconductor is formed between a boron phosphide based semiconductor crystal layer and the active layer. The semiconductor has indium composition which is at most 1/2 of indium composition of the group III nitride semiconductor crystal layer forming the active layer. The intermediate layer is constituted from a polycrystal layer containing crystals different in a crystallinity. <P>COPYRIGHT: (C)2003,JPO |
