| 摘要 |
PROBLEM TO BE SOLVED: To improve operation rate characteristic of a HBT. SOLUTION: In the hetero structure bipolar transistor, a sub-collector layer 2, a collector layer 3, and a base layer 4 are laminated on a half-insulated substrate 1, a mesa type emitter layer 5 and an emitter cap layer 7 are laminated on the base layer, and a collector electrode 9 is formed on the sub-collector layer 2, a base electrode 8 is formed at the position near the emitter layer 5 on the base layer 4, and an emitter electrode 7 is formed on the emitter cap layer 6. Moreover, a first insulation film 13 covering the part between the mesa side surface of the mesa type emitter layer at the upper surface of the base layer 4 and the base electrode 8, the collector layer 3 at the upper surfaces of the first insulation film 13, the collector electrode 9, and the sub- collector layer 2, and a second insulation film 14 covering the part other than the collector electrode 9 are also formed. COPYRIGHT: (C)2003,JPO
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