METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To obtain a method for fabricating a semiconductor device including a capacitance element in which the capacitance thin film can be made thin without increasing the number of steps and an isolation region can be prevented from becoming thin. SOLUTION: In the method for fabricating a semiconductor device where an MOS transistor having a gate insulating film 15b and a capacitance element 17 having a capacitance insulating film 15a are formed on a semiconductor substrate 11, an isolation region 12 is formed on the semiconductor substrate 11 and then a lower electrode 13 of silicon having impurity concentration of about 1×1019cm-3or above is formed on the isolation region 12. Subsequently, hydrogen and oxygen are introduced at a flow rate of about 10 L/m (standard state) and a flow rate ratio of 9:1 directly into a chamber having a temperature of about 850°C-1100°C and a pressure of about 8 mTorr thus forming the capacitance insulating film 15a and the gate insulating film 15b simultaneously in a steam atmosphere under reduced pressure. COPYRIGHT: (C)2003,JPO