| 摘要 |
A plasma processing apparatus includes a processing container 53 whose interior has a mount table 10, a glass plate 8 for covering an upper opening of the processing container 53, a microwave supplier 50, a coaxial waveguide 52 having its end connected with the microwave supplier 50 to have an inner conductor 52B and an outer conductor 52A, a radial waveguide box 54 connected to the other end of the outer conductor 52A of the coaxial waveguide 52 and formed to expand from the other end of the outer conductor 52A outward in the radial direction and subsequently extend downward, a disc-shaped antenna member 60 for covering a lower opening of the radial waveguide box 54, the antenna member 60 having its central part connected with the other end of the inner conductor 52B, and a metallic reflector 64 arranged on the opposite side of the antenna member's part connected with the inner conductor 52B, for reflecting ah electric field reflected by an inner wall of the processing container 4. With the constitution of the apparatus, it is possible to produce a uniform plasma in the processing container, accomplishing an even processing on even a large-diameter wafer.
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