| 摘要 |
<p>The invention relates to a semiconductor substrate (1) comprising at least one first conductor strip that runs on the front face (20) of said substrate (3). According to the invention, at least one region (9) is structured in the semiconductor substrate (1), by means of at least one isolation trench (8), said region being electrically isolated in relation to the remainder of the semiconductor substrate (1), consisting substantially of the semiconductor material and being used to contact the first conductor strip (3) to the rear face (30) of the semiconductor substrate (1). The inventive semiconductor substrate (1) is particularly suitable for the vertical integration of integrated circuits (2) comprising an additional chip (1), an integrated circuit, sensor element, memory element or an active ASIC subassembly that are mounted on said substrate, for example, by means of a flip-chip chip-to-chip assembly.</p> |
