Aluminum nitride ceramics, members for use in a system for producing semiconductors, corrosion resistant members and conductive members

摘要

An object of the present invention is to preserve the characteristic properties of an aluminum nitride ceramics and reduce its volume resistivity. An aluminum nitride ceramics contains boron atoms in an amount of not lower than 1.0 weight percent and carbon atoms in an amount of not lower than 0.3 weight percent and has a volume resistivity at room temperature of not higher than 1x1012 OMEGA.cm. Alternatively, an aluminum ceramics comprises aluminum nitride and intergranular phases mainly consisting of boron nitride constituting a conducting path and has a volume resistivity at room temperature of 1x1012 OMEGA.cm. Such ceramics may be obtained by holding a mixture at least containing aluminum nitride and boron carbide at a holding temperature not lower than 1400° C. and not higher than 1800 ° C. and then sintered at a maximum temperature higher than the holding temperature.