发明名称 |
Deposition of tungsten films |
摘要 |
A method of forming a composite tungsten film on a substrate is described. The composite tungsten film comprises sequentially deposited tungsten nucleation layers and tungsten bulk layers. Each of the tungsten nucleation layers and the tungsten bulk layers have a thickness less than about 300 Å. The tungsten nucleation layers and the tungsten bulk layers are formed one over the other until a desired thickness for the composite tungsten film is achieved. The resulting composite tungsten film exhibits good film morphology. The tungsten nucleation layers may be formed using a cyclical deposition process by alternately adsorbing a tungsten-containing precursor and a reducing gas on the substrate. The tungsten bulk layers may be formed using a chemical vapor deposition (CVD) process by thermally decomposing a tungsten-containing precursor.
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申请公布号 |
US2003153181(A1) |
申请公布日期 |
2003.08.14 |
申请号 |
US20020074898 |
申请日期 |
2002.02.11 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
YOON HYUNGSUK A.;FANG HONGBIN;YANG MICHAEL X. |
分类号 |
C23C16/02;C23C16/14;C23C16/44;C23C16/455;H01L21/285;H01L21/768;(IPC1-7):H01L21/44 |
主分类号 |
C23C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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