发明名称 Deposition of tungsten films
摘要 A method of forming a composite tungsten film on a substrate is described. The composite tungsten film comprises sequentially deposited tungsten nucleation layers and tungsten bulk layers. Each of the tungsten nucleation layers and the tungsten bulk layers have a thickness less than about 300 Å. The tungsten nucleation layers and the tungsten bulk layers are formed one over the other until a desired thickness for the composite tungsten film is achieved. The resulting composite tungsten film exhibits good film morphology. The tungsten nucleation layers may be formed using a cyclical deposition process by alternately adsorbing a tungsten-containing precursor and a reducing gas on the substrate. The tungsten bulk layers may be formed using a chemical vapor deposition (CVD) process by thermally decomposing a tungsten-containing precursor.
申请公布号 US2003153181(A1) 申请公布日期 2003.08.14
申请号 US20020074898 申请日期 2002.02.11
申请人 APPLIED MATERIALS, INC. 发明人 YOON HYUNGSUK A.;FANG HONGBIN;YANG MICHAEL X.
分类号 C23C16/02;C23C16/14;C23C16/44;C23C16/455;H01L21/285;H01L21/768;(IPC1-7):H01L21/44 主分类号 C23C16/02
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