Semiconductor device having dual-gate structure and method of manufacturing the same

摘要

By forming a doped polysilicon layer (PS2) containing boron through the CVD method in a material gas including a compound containing boron such as BCl3 (boron trichloride), an opening left after removing a gate electrode (11) in a region (PR) is filled with the doped polysilicon layer (PS2). In the doped polysilicon layer (PS2), boron atoms are uniformly distributed with high activation rate. Thus provided is a method of manufacturing a semiconductor device, which is capable of suppressing depletion of a gate electrode of a P-channel MOS transistor and suppressing penetration of impurity in a CMOS transistor of dual-gate structure.