REWRITABLE OPTICAL STORAGE MEDIUM AND USE OF SUCH MEDIUM

摘要

A description is given of a rewritable optical storage medium 10 comprising a substrate 1, a first dielectric layer 2, a phase-change recording layer 3 on the basis of Ge-Sb-Te, a second dielectric layer 4, and a metal reflective layer 5. The recording layer 3 is an alloy having the composition GexSbyTez, in atom %, wherein 0 < x < 15, 50 < y < 80, 10 < z < 30 and x + y + z = 100, and the recording layer 3 has a thickness selected from the range of 7 to 18 nm. Such a medium 10 is suitable for high data rate recording with a data rate of larger than 25 Mb/s while the recording layer 6 remains relatively thin having a relatively high optical transparency.