发明名称 |
REWRITABLE OPTICAL STORAGE MEDIUM AND USE OF SUCH MEDIUM |
摘要 |
<p>A description is given of a rewritable optical storage medium (10) comprisin g a substrate (1), a first dielectric layer (2), a phase-change recording laye r (3) on the basis of Ge-Sb-Te, a second dielectric layer (4), and a metal reflective layer (5). The recording layer (3) is an alloy having the composition GexSbyTez, in atom %, wherein 0 < x < 15, 50 < y < 8 0, 10 < z < 30 and x + y + z = 100, and the recording layer (3) has a thickness selected fr om the range of 7 to 18 nm. Such a medium (10) is suitable for high data rate recording with a data rate of larger than 25 Mb/s while the recording layer (6) remains relatively thin having a relatively high optical transparency.</ SDOAB></p> |
申请公布号 |
CA2475372(A1) |
申请公布日期 |
2003.08.14 |
申请号 |
CA20032475372 |
申请日期 |
2003.01.24 |
申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V. |
发明人 |
ZHOU, GUO-FU;RIJPERS, JOHANNES C. N.;BORG, HERMANUS J.;VAN SCHIJNDEL, MARK |
分类号 |
B41M5/26;G11B7/24;G11B7/243;G11B7/257;G11B7/258;(IPC1-7):G11B7/24 |
主分类号 |
B41M5/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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