| 摘要 |
<p>A field-effect transistor having a T-shaped gate electrode has an offset gate structure in which a parasitic capacitance created between the canopy of the T-shaped gate electrode and a semiconductor substrate is reduced. In this structure, the ohmic contact layer just below the bottom region of an insulating film formed in contact with both the source side and the drain side of the column portion of the T-shaped gate electrode is removed from the column portion to just below the canopy end portion of the T-shaped gate electrode. Moreover, the structure is an offset structure in which the drain side removed region is larger than the source side removed region. The removal of the ohmic contact layer is done by an anisotropic etching method. The structure of the field effect transistor having the T-shaped gate is applied to a strain-relaxed high-mobility field-effect transistor. This field effect transistor is used as an active element constituting an the MMIC.</p> |
