VCSEL DIODE AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A VCSEL diode and a fabricating method thereof are provided to protect an ohmic contact layer by forming a dielectric protection layer on a surface of the ohmic contact layer. CONSTITUTION: A VCSEL diode includes a compound semiconductor substrate(1), a lower distributed Bragg reflection layer(3), an active layer(5), a current guide layer(7), an upper distributed Bragg reflection layer(8), an ohmic contact layer(9), a plurality of ohmic metal layers(14,15), and a dielectric protection layer(10). The lower distributed Bragg reflection layer, the active layer, the current guide layer, the upper distributed Bragg reflection layer, the ohmic contact layer, the ohmic metal layers are sequentially formed on the compound semiconductor substrate. The dielectric protection layer is formed on the exposed ohmic contact layer.