| 摘要 |
There is provided a stripe waveguide structure type semiconductor laser device capable of preventing the occurrence of unevenness on the side surface of a channel and a fabricating method therefor. An etching stop layer 1 is formed under a second upper clad layer 2. This etching stop layer 1 is constructed of a GaAs layer 1a, an Al0.5Ga0.5As layer 1b formed under this GaAs layer 1a and a GaAs layer 1c formed under this Al0.5Ga0.5As layer 1b. With this arrangement, the unevenness of the side surface of the channel formed of a GaAs layer 3 and the second upper clad layer 2 can be controlled.
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