Regulation method for the drain, body and source terminals voltages in a non-volatile memory cell during a program phase and corresponding program circuit

摘要

A method and program-load circuit is for regulating the voltages at the drain and body terminals of a non-volatile memory cell being programmed. These voltages are applied from a program-load circuit connected in a conduction pattern to transfer a predetermined voltage value to at least one terminal of the memory cell. The method includes a step of regulating the voltage value locally, within the program-load circuit, to overcome the effect of a parasitic resistor present in the conduction pattern.