METHOD FOR MANUFACTURING A PROGRAMMABLE CHALCOGENIDE FUSE WITHIN A SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a programmable chalcogenide fuse within a semiconductor device is disclosed. A resistor (18) is initially formed on a substrate. Then, a chalcogenide fuse (21) is formed on top of the resistor. Finally, a conductive layer is deposited on top of the chalcogenide fuse for providing electrical conduction to the chalcogenide fuse.