MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM) CROSS-POINT ARRAY WITH REDUCED PARASITIC EFFECTS

摘要

An architecture for a magnetoresistive random access memory (MRAM) storage cell 300 with reduced parasitic effects is presented. Tow additional runs of metal laid in parallel to both the wordline 310 and the bitline 320 of the MRAM device, respectively, to provide a write wordline 345 and a write bitline 355 are separated from the wordline and the bitline by a dielectric layer 340 and 350 respectively and which provides electrical isolation of the write currents from a magnetic stacks. The electrical isolation of the write wordline 345 and write bitlines 355 reduces the parasitic capacitance, inductance, and resistance seen by the wordline and bitlines during the write operation. The wordline 310 and bitlines 320 remain as in a standard MRAM cross-point array architecture and are dedicated for reading the contents of the MRAM storage cell.