A method for production testing includes receiving a wafer including a semiconductor substrate and a non-conducting layer formed over the substrate, following etching of contact openings through the non-conducting layer to the substrate, the contact openings including an array of the contact openings arranged in a predefined test pattern in a test area on the wafer. An electron beam is directed to irradiate the test area, a specimen current flowing through the substrate responsive to the electron beam is measured. The specimen current is analyzed so as to assess a dimension of the contact openings.
申请公布号
WO03067653(A2)
申请公布日期
2003.08.14
申请号
WO2003US03494
申请日期
2003.02.04
申请人
APPLIED MATERIALS, INC.;APPLIED MATERIALS ISRAEL, LTD.;KADYSHEVITCH, ALEXANDER;SIMON, AVI