| 摘要 |
<p>A semiconductor structure for providing an epitaxial zinc oxide layer (60) having p-type conduction for semiconductor device manufacturing and methods of depositing the p-type zinc oxide layer (60) A zinc oxide layer (60) is deposited epitaxially by molecular beam epitaxy on a crystalline zinc oxide substrate (62). The zinc oxide layer (60) incorporates a p-type dopant, such as nitrogen, in an atomic concentration adequate to provide p-type conduction. The p-type zinc oxide layer (60) may further incorporate an atomic concentration of a compensating species, such as lithium, sufficient to electronically occupy excess donors therein so that the efficiency of the p-type dopant may be increased.</p> |
