| 摘要 |
PURPOSE: A method for measuring stray light is provided to quantitatively measure the degree of stray light generated when a pattern of a mask is formed on a wafer through an exposure process by positioning a test pattern in a predetermined region of the mask. CONSTITUTION: The test pattern(22) is positioned in a main pattern edge region of the mask(21). The overlay of a type in which the test pattern is formed on the wafer is measured through an exposure process so that the degree of the stray light generated in the entire region of the wafer corresponding to the test pattern of the mask is quantitatively detected.
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