| 发明名称 |
SEMICONDUCTOR DEVICE HAVING HEAT DETECTING ELEMENT AND INSULATING CAVITY AND MEHTOD OF MANUFACTURING THEREOF |
| 摘要 |
The present invention provides a semiconductor device including a silicon substrate; a heat insulating layer including a silicon oxide film; and a heat detecting portion, in which the heat insulating layer includes a closed cavity and/or a hole, an interior of the hole has a greater diameter than an opening of the hole, and at least a portion of the closed cavity or the hole is formed within the silicon oxide film. The invention also provides a method of manufacturing this semiconductor device.
|
| 申请公布号 |
US2003151106(A1) |
申请公布日期 |
2003.08.14 |
| 申请号 |
US20030368207 |
申请日期 |
2003.02.18 |
| 申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO. |
发明人 |
KOMOBUCHI HIROYOSHI;CHATANI YOSHIKAZU;YAMADA TAKAHIRO;NISHIO RIEKO;UOZUMI HIROAKI;MASUYAMA MASAYUKI;YAMAGUCHI TAKUMI |
| 分类号 |
G01J5/10;H01L23/34;(IPC1-7):H01L27/14 |
主分类号 |
G01J5/10 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
