MEMORY CELL

摘要

Disclosed is a memory cell comprising a sequence of layers in the trench, said sequence of layers consisting of a first oxide layer (1), a nitride layer (2), and a second oxide layer (3) facing the gate electrode on the side walls of the trench. The nitride layer (2) is missing in a bent area (4) on the bottom of the trench. In an alternative embodiment of the invention, a step is configured on the side walls of the trench, preferably below the source area or the drain area.