发明名称 NAND flash memory device has registers for serially receiving address, command and output data of input buffer circuits based on respective lead signals from a control logic
摘要 An address register (150) receives address of an output signal of an input buffer circuit (160) based on an address load signal from a control logic (200). A command register receives a command output from the buffer circuit based on a command load signal from control logic. A data input register (190) receives simultaneously the outputs of buffer circuits (160,170) based on data load signal from the control logic. An independent claim is also included for non volatile memory operating method.
申请公布号 DE10301431(A1) 申请公布日期 2003.08.14
申请号 DE2003101431 申请日期 2003.01.14
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, YEONG-TAEK;SUH, KANG-DEOG
分类号 G11C16/06;G11C7/10;G11C16/02;G11C16/04;G11C16/08;G11C16/32;(IPC1-7):G11C16/06 主分类号 G11C16/06
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