COMPOSITE STORAGE CIRCUIT AND SEMICONDUCTOR DEVICE HAVING THE SAME

摘要

A semiconductor device capable of high-speed write and read operations, providing a non-volatile composite storage circuit, thereby realizing an instant ON function/instant OFF function. Here, the composite storage circuit includes a storage circuit consisting of a volatile storage circuit and a non-volatile storage circuit connected in parallel and is configured in such a manner that the same information as the storage information in the volatile storage circuit is stored in the non-volatile storage circuit. Moreover, when the power supply to the volatile storage circuit is lowered, storage information of the volatile storage circuit is written into the non-volatile storage circuit. Furthermore, when power supply is resumed after service interruption or power supply lowering, the storage information of the non-volatile storage circuit is written back to the volatile storage circuit. The semiconductor device has such a composite storage circuit.