发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
To a provide a method of forming a layered film of a silicon nitride film and a silicon oxide film on a glass substrate in a short time without requiring a plurality of film deposition chambers. In a thin film transistor, a layered film including a silicon nitride oxide film (12) is formed between a semiconductor layer (13) and a substrate (11) using the same chamber. The silicon nitride oxide film has a continuously changing composition ration of nitrogen or oxygen. An electric characteristic of the TFT is thus improved.
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申请公布号 |
US2003151119(A1) |
申请公布日期 |
2003.08.14 |
申请号 |
US20030367819 |
申请日期 |
2003.02.19 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
SAKAMA MITSUNORI;ISHIMARU NORIKO;MIWA MASAHIKO;IWAI MITINORI |
分类号 |
H01L29/786;G02F1/136;G02F1/1362;G02F1/1368;H01L21/77;H01L21/84;H01L27/12;(IPC1-7):H01L23/58 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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