| 摘要 |
<p>A description is given of a rewritable optical storage medium (10) comprising a substrate (1), a first dielectric layer (2), a phase-change recording layer (3) on the basis of Ge-Sb-Te, a second dielectric layer (4), and a metal reflective layer (5). The recording layer (3) is an alloy having the composition GexSbyTez, in atom %, wherein 0 < x < 15, 50 < y < 80, 10 < z < 30 and x + y + z = 100, and the recording layer (3) has a thickness selected from the range of 7 to 18 nm. Such a medium (10) is suitable for high data rate recording with a data rate of larger than 25 Mb/s while the recording layer (6) remains relatively thin having a relatively high optical transparency.</p> |
