| 发明名称 |
Manufacturing process for insulated gate field effect transistors (igfet) with low short circuit density between gate and source and devices obtained thereby |
| 摘要 |
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| 申请公布号 |
EP0545484(B1) |
申请公布日期 |
2003.08.13 |
| 申请号 |
EP19920203670 |
申请日期 |
1992.11.27 |
| 申请人 |
CONSORZIO PER LA RICERCA SULLA MICROELETTRONICA NEL MEZZOGIORNO - CORIMME |
发明人 |
ZAMBRANO, RAFFAELE |
| 分类号 |
H01L21/336;H01L29/423;H01L29/78;(IPC1-7):H01L21/336;H01L29/772 |
主分类号 |
H01L21/336 |
| 代理机构 |
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代理人 |
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| 主权项 |
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