发明名称 Insulating method and device to obtain an excellent galvanic insulation between two low voltage electronic devices in an integrated opto-isolator
摘要 The invention relates to a method and an isolation device for providing optimum galvanic isolation between two low-voltage electronic devices (A,B), with the devices (A,B) being optically coupled together. The isolation device is essentially an opto-electronic integrated structure comprising a waveguide (17) that is formed between two separate circuit portions integrated in respective regions (13,13') of the same semiconductor substrate. Thus, the circuit portions (A,B) are fully galvanically isolated from each other, while the optical signal is transmitted therebetween through an integrated waveguide that is photolithographically patterned in the semiconductor. <IMAGE>
申请公布号 EP1335507(A1) 申请公布日期 2003.08.13
申请号 EP20020425043 申请日期 2002.01.31
申请人 STMICROELECTRONICS S.R.L. 发明人 SAGGIO, MARIO;COFFA, SALVATORE;FRISINA, FERRUCCIO
分类号 H04B10/00;(IPC1-7):H04B10/00 主分类号 H04B10/00
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