发明名称 |
Plasma cvd apparatus |
摘要 |
A plasma CVD apparatus comprises a reaction container for allowing a reaction for forming a thin film on a semiconductor wafer to be performed, a bias electrode which applies a high frequency bias for sputtering to the semiconductor wafer, a nozzle which supplies SiH4 gas including at least hydrogen into the reaction container, and a control circuit which on/off-controls the high frequency bias through a switch and which on/off-controls the supply of SiH4 gas through a flow rate controller based on an opposite control logic to a high frequency bias control logic. <IMAGE> |
申请公布号 |
EP1335037(A2) |
申请公布日期 |
2003.08.13 |
申请号 |
EP20020019104 |
申请日期 |
2002.08.29 |
申请人 |
MITSUBISHI HEAVY INDUSTRIES, LTD. |
发明人 |
SHIMAZU, TADASHI;INOUE, MASAHIKO |
分类号 |
C23C16/40;C23C16/44;C23C16/455;C23C16/517;H01J37/32;H01L21/31;(IPC1-7):C23C16/52 |
主分类号 |
C23C16/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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