发明名称 CVD REACTOR WITH GRAPHITE-FOAM INSULATED, TUBULAR SUSCEPTOR
摘要 The invention relates to a device for depositing especially crystalline layers on especially crystalline substrates by means of reaction gases fed to a heated process chamber. Said process chamber is formed by the cavity of an especially multi-part graphite tube arranged in a reactor housing that especially comprises quartz walls. Said reactor housing, in the area of the process chamber, is enclosed by a high-frequency coil and the space between the reactor housing wall and the graphite tube is filled with a graphite foam sleeve. In order to improve heat insulation, the graphite foam sleeve is fully slit. The slot is wider than the maximum thermal elongation of the graphite foam sleeve in the peripheral direction to be expected when the device is heated up to process temperature.
申请公布号 EP1334222(A1) 申请公布日期 2003.08.13
申请号 EP20010993719 申请日期 2001.10.18
申请人 AIXTRON AG 发明人 KAEPPELER, JOHANNES;WISCHMEYER, FRANK;BERGE, RUNE
分类号 H05B6/22;C23C16/44;C23C16/46;C30B25/08;C30B25/10;H01L21/205;(IPC1-7):C30B25/08 主分类号 H05B6/22
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